lead-free green ds30896 rev. 2 - 2 1 of 4 2n7002k www.diodes.com diodes incorporated 2n7002k n-channel enhancement mode field effect transistor characteristic symbol value units drain-source voltage v dss 60 v gate-source voltage v gss 20 v drain current (note 1) continuous pulsed (note 3) i d 300 800 ma total power dissipation (note 1) p d 350 mw thermal resistance, junction to ambient r ja 357 c/w operating and storage temperature range t j ,t stg -65 to +150 c note: 1. device mounted on fr-4 pcb. 2. no purposefully added lead. 3. pulse width 10 s, duty cycle 1%. 4. diodes inc.'s "green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. mechanical data a e j l top view m b c h g d k d g s source e q uivalent circuit gate protection diode gate d ra i n new product case: sot-23 case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals: finish matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 terminal connections: see diagram marking: see last page ordering & date code information: see last page weight: 0.008 grams (approximate) low on-resistance: r ds(on) low gate threshold voltage low input capacitance fast switching speed low input/output leakage lead free by design/rohs compliant (note 2) esd protected up to 2kv "green" device (note 4) qualified to aec-q101 standards for high reliability features maximum ratings @ t a = 25c unless otherwise specified esd protected up to 2kv sot-23 dim min max a 0.37 0.51 b 1.20 1.40 c 2.30 2.50 d 0.89 1.03 e 0.45 0.60 g 1.78 2.05 h 2.80 3.00 j 0.013 0.10 k 0.903 1.10 l 0.45 0.61 m 0.085 0.180 0 8 all dimensions in mm
ds30896 rev. 2 - 2 2 of 4 2n7002k www.diodes.com electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss 60 v v gs = 0v, i d = 10 a zero gate voltage drain current i dss 1.0 a v ds = 60v, v gs = 0v gate-source leakage i gss 10 a v gs = 20v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs(th) 1.0 1.6 2.5 v v ds = 10v, i d = 1ma static drain-source on-resistance r ds (on) 2.0 3.0 v gs = 10v, i d = 0.5a v gs = 5v, i d = 0.05a forward transfer admittance |y fs | 80 ms v ds =10v, i d = 0.2a dynamic characteristics input capacitance c iss 50 pf v ds = 25v, v gs = 0v f = 1.0mhz output capacitance c oss 25 pf reverse transfer capacitance c rss 5.0 pf new product 0 0.2 0.4 0.6 0.8 1.0 01 2 3 4 5 v drain-source voltage (v) fi g .1 t y pical output characteristics ds , i drain current (a) d , 1.2 1 .4 3v 4v 6v 8v 10v v = 10v 8v 6v 5v 4v 3v gs 5v v , gate-source voltage (v) fi g .2 t y pical transfer characteristics gs 0.01 0.10 1 . 00 1 1.5 2 2.5 33.54 4.5 5 i, d drain current (a) t = 125 c a t=25c a t=-25c a t=75c a v = 10v pulsed ds t , channel temperature (c) fig. 3 gate threshold voltage vs. channel tem p erature ch 0 0.5 1 1.5 2 -50 -25 0 25 50 75 100 125 150 v gate threshold voltage (v) gs(th), v=10v i=1ma pulsed ds d 0.1 i drain current (a) fig. 4 static drain-source on-resistance vs. drain current d , 1 10 0.001 0.01 0.1 1 t=150c a t = 125 c a t=85c a t=-55c a t=25c a t=0c a t=-25c a v = 10v pulsed gs notes: 5. short duration test pulse used to minimize self-heating effect.
ds30896 rev. 2 - 2 3 of 4 2n7002k www.diodes.com 1 i , drain current (a) fig. 5 static drain-source on-resistance vs. drain current d 10 0.1 1 0.001 0.01 0.1 v=5v pulsed gs t = 150 c a t = 125 c a t=85c a t=-55c a t=25c a t=-25c a t=0c a 0 v gate source voltage (v) fig. 6 static drain-source on-resistance vs. gate-source volta g e gs, 1 2 3 4 5 6 7 0 2 4 6 8 10 12 14 16 18 20 i = 300ma d i = 150ma d t=25c pulsed a new product i , reverse drain current (a) dr 0.001 0.01 0.1 1 0 0.5 1 1.5 v, fig. 8 reverse drain current vs. source-drain volta g e sd source-drain voltage (v) v=0v pulsed gs t=-55c a t=150c a t = 125 c a t=85c a t=25c a t=0c a t=-25c a 0 tch, channel temperature ( c) fig. 7 static drain-source on-state resistance vs. channel tem p erature 0.5 1 1.5 2 2 .5 -75 -50 -25 025 50 75 100 125 150 v = 10v pulsed gs i = 300ma d i = 150ma d 1 i , drain current (a) d fig.10 forward transfer admittance vs. drain current |y |, forward transfer admittance (s) fs 0.001 0.01 0.1 0.001 0.01 0.1 1 v=10v pulsed gs t=25c a t= a -55 c t= a 150 c t= a 85 c 1 0.001 0.01 0.1 1 0 0.5 i , reverse drain current (a) dr v, fig. 9 reverse drain current vs. source-drain volta g e sd source-drain voltage (v) v=0v gs v = 10v gs t = 25c pulsed a
ds30896 rev. 2 - 2 4 of 4 2n7002k www.diodes.com new product k7k ym k7k = product type marking code ym = date code marking y = year ex: s = 2005 m = month ex: 9 = september date code key month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd notes: 6. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. device packaging shipping 2N7002K-7 sot-23 3000/tape & reel ordering information marking information (note 6) year 2005 2006 2007 2008 2009 code stu vw important notice diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. diodes incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems wit hout the expressed written approval of the president of diodes incorporated.
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